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Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

Journal Of Natural Sciences And Mathematics Research

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Title Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer
 
Creator Astuti, Budi
Abd Rahman, Shaharin Fadzli
Tanikawa, Masahiro
Mahmood, Mohamad Rusop
Yasui, Kanji
Manaf Hashim, Abdul
 
Subject Materials Sciences; fundamental sciences; materials characterization; applied sciences
Silicon carbide, graphene, hot-mesh CVD
 
Description Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO2/Si substrates was carried out using a home-made hot-mesh chemical vapor deposition (HM-CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while hydrogen (H2) as carrier gas. The substrate temperature, tungsten mesh temperature, H2 flow rate and distance between mesh and substrate were fixed at 750 °C, 1700 °C, 100 sccm and 30 mm, respectively. The growth pressures were set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO2/Si were confirmed by the observation of θ-2θ diffraction peak at 35.68°. The diffraction peak of thin film on graphene/SiO2/Si substrate at pressure growth is 1.8 Torr is relatively more intense and sharper than thin film grown at pressure growth 1.2 and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The sharp and strong peak at 33° was observed on the all film grown, that peak was attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is formed is not understood. In principle, it can’t be denied that the low quality of the grown thin film is influenced by the capability of our home-made apparatus. However, we believe that the quality can be further increased by the improvement of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.
 
Publisher Faculty of Science and Technology, Universitas Islam Negeri Walisongo Semarang
 
Contributor —
 
Date 2015-06-28
 
Type info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
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Format application/pdf
 
Identifier https://journal.walisongo.ac.id/index.php/JNSMR/article/view/476
10.21580/jnsmr.2015.1.1.476
 
Source Journal Of Natural Sciences And Mathematics Research; Vol 1, No 1 (2015): Volume 1, Nomor 1, 2015; 5-10
2460-4453
2614-6487
 
Language eng
 
Relation https://journal.walisongo.ac.id/index.php/JNSMR/article/view/476/429
 
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